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| BAS 125 Silicon Schottky Diodes * For low-loss, fast-recovery, meter protection, bias isolation and clamping applications * Integrated diffused guard ring * Low forward voltage 3 2 1 VPS05161 BAS 125 BAS 125-04 3 BAS 125-05 3 2 BAS 125-06 3 1 3 EHA07002 1 1 2 EHA07004 1 2 EHA07006 EHA07005 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS 125 BAS 125-04 BAS 125-05 BAS 125-06 Marking 13s 14s 15s 16s 1=A 1 = A1 1 = A1 1 = C1 Pin Configuration 2 = n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 Package SOT-23 SOT-23 SOT-23 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation TS = 59 C BAS 125 TS = 34 C BAS 125-04 -05 -06 Junction temperature Storage temperature Tj Tstg Symbol VR IF IFSM Ptot 250 250 150 -55 ... 150 C Value 25 100 500 mW Unit V mA 1 Oct-19-1999 BAS 125 Thermal Resistance Parameter Junction - ambient 1) BAS 125 Junction - ambient 1) BAS 125-04 -05 -06 Junction - soldering point BAS 125 Junction - soldering point BAS 125-04 -05 -06 Symbol RthJA RthJA RthJS RthJS Value 445 625 365 465 Unit K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 20 V VR = 25 Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA VF 385 530 800 400 650 950 IR 100 150 typ. max. Unit nA mV AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Forward voltage matching 2) IF = 10 mA VF 20 mV RF 15 CT 1.1 pF 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm 2) VF is the difference between the lowest and the highest VF in the component 2 Oct-19-1999 BAS 125 Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Forward current IF = f (TA*, TS) *Package mounted on alumina BAS 125-04, -05, -06 100 BAS 125... EHD07119 F mA 10 1 TA = -40C 25 C 85 C 150 C F mA 80 TS 60 TA 40 10 0 10 -1 20 10 -2 0.0 0.5 V VF 1.0 0 0 50 100 C 150 TA ; TS Forward current IF = f (TA *, TS) *Package mounted on alumina BAS 125 100 mA BAS 125 EHD07123 Reverse current IR = f (VR) TA = Parameter 10 1 BAS 125... EHD07116 R F A 10 0 TA = 125 C 80 TA = 85 C 60 TA 40 TS 10 -1 10 -2 20 TA = 25 C 0 0 50 100 C TS ; TA 150 10 -3 0 10 V VR 20 3 Oct-19-1999 BAS 125 Diode capacitance CT = f (VR) f = 1MHz BAS 125... EHD07117 Differential forward resistance rf = f (IF) f = 10 kHz 1.0 CT pF 0.8 10 4 rf 10 3 BAS 125... EHD07118 0.6 10 2 0.4 10 1 0.2 0.0 0 10 V VR 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 F 4 Oct-19-1999 |
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